SURFACE DAMAGE IN INP INDUCED DURING SIO2 DEPOSITION BY RF SPUTTERING

被引：17
作者：
TSUBAKI, K
ANDO, S
OE, K
SUGIYAMA, K
机构：
[1] Musashino Electrical Communication Laboratory, N.T.T.
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 06期
关键词：
D O I：
10.1143/JJAP.18.1191
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
[No abstract available]
引用
收藏
页码：1191 / 1192
页数：2
相关论文
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