A 6K-GATE GAAS GATE ARRAY WITH A NEW LARGE-NOISE-MARGIN SLCF CIRCUIT

被引:6
作者
TERADA, T
IKAWA, Y
KAMEYAMA, A
KAWAKYU, K
SASAKI, T
KITAURA, Y
ISHIDA, K
NISHIHORI, K
TOYODA, N
机构
关键词
D O I
10.1109/JSSC.1987.1052810
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:755 / 761
页数:7
相关论文
共 44 条
  • [41] NOVEL WSI/AU T-SHAPED GATE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR FABRICATION PROCESS FOR SUPER LOW-NOISE MICROWAVE MONOLITHIC INTEGRATED-CIRCUIT AMPLIFIERS
    TAKANO, H
    HOSOGI, K
    KATO, T
    OKU, T
    KOHNO, Y
    NAKANO, H
    SATO, K
    FUNADA, M
    ISHIHARA, O
    TSUBOUCHI, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 1014 - 1017
  • [42] New high-k SrTa2O6 gate dielectrics prepared by plasma-enhanced atomic layer chemical vapor deposition
    Chae, BG
    Lee, WJ
    You, IK
    Ryu, SO
    Jung, MY
    Yu, BG
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (6B): : L729 - L731
  • [43] BEHAVIOR AND COMPARISON OF RF DEVICES SI JFET, DUAL GATE MOSFET, AND GAAS-MESFET AT 4.2, 77, AND 300 K FROM THE POINT-OF-VIEW OF NOISE AND GBW IN THE FREQUENCY-RANGE 10-KHZ DIVIDED-BY 50-MHZ
    CELANI, F
    GIORGI, A
    SAGGESE, A
    CATA, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C429 - C429
  • [44] NEW TELLUROMETALATES OF GALLIUM AND INDIUM - K[K([18]CROWN-6)](2)[GATE3]CENTER-DOT 2CH(3)CN AND [(NET(4))(5)][IN3TE7]CENTER-DOT-O.5ET(2)O
    PARK, CW
    SALM, RJ
    IBERS, JA
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION IN ENGLISH, 1995, 34 (17): : 1879 - 1880