DONOR-ACCEPTOR PAIRS IN SEMICONDUCTORS

被引:214
作者
WILLIAMS, F
机构
来源
PHYSICA STATUS SOLIDI | 1968年 / 25卷 / 02期
关键词
D O I
10.1002/pssb.19680250202
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:493 / &
相关论文
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[21]   PAIR SPECTRA INVOLVING DONOR AND/OR ACCEPTOR GERMANIUM IN GAP [J].
GERSHENZON, M ;
TRUMBORE, FA ;
MIKULYAK, RM ;
KOWALCHIK, M .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :486-+
[22]   EVIDENCE FOR RADIATIVE RECOMBINATION BETWEEN DEEP DONOR-ACCEPTOR PAIRS IN GAP AT ROOM TEMPERATURE [J].
GERSHENZON, M ;
TRUMBORE, FA ;
MIKULYAK, RM ;
KOWALCHIK, M .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :483-+
[23]  
GERSHENZON M, 1962, INTERN C SEMICONDUCT, P752
[24]   EDGE EMISSION IN CDS AS INTERNAL RADIATIVE TRANSITION IN DONOR-ACCEPTOR ASSOCIATES [J].
GOEDE, O ;
GUTSCHE, E .
PHYSICA STATUS SOLIDI, 1966, 17 (02) :911-&
[25]  
GROSS EF, 1963, DOKL AKAD NAUK SSSR+, V152, P309
[26]  
GROSS EF, 1962, DOKL AKAD NAUK SSSR+, V146, P1047
[27]  
GUNSUL CJ, 1966, B AM PHYS SOC, V11, P227
[28]   DOUBLE ACCEPTOR FLUORESCENCE IN II-VI COMPOUNDS [J].
HALSTED, RE ;
SEGALL, B .
PHYSICAL REVIEW LETTERS, 1963, 10 (09) :392-&
[29]   SHALLOW IMPURITY TRAPS AND ELECTRON TRANSFER DYNAMICS IN N-TYPE SILICON AT LIQUID HELIUM TEMPERATURES [J].
HONIG, A ;
LEVITT, R .
PHYSICAL REVIEW LETTERS, 1960, 5 (03) :93-96
[30]  
HONIG A, 1965, RADIATIVE RECOMBINAT, P113