SULFURIZATION OF INP(001) SURFACES STUDIED BY X-RAY PHOTOELECTRON AND X-RAY-INDUCED AUGER-ELECTRON SPECTROSCOPIES (XPS/XAES)

被引:32
作者
CHASSE, T
PEISERT, H
STREUBEL, P
SZARGAN, R
机构
[1] Universität Leipzig, Institut für Physikalische und Theoretische Chemie, D-04103 Leipzig
关键词
AUGER ELECTRON SPECTROSCOPY; CHALCOGENS; INDIUM PHOSPHIDE; SURFACE ELECTRONIC PHENOMENA; THERMAL DESORPTION; X-RAY PHOTOELECTRON SPECTROSCOPY;
D O I
10.1016/0039-6028(95)00306-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Surface chemistry of n- and p-doped InP(001) after treatment with sulfur from different sources has been investigated by XPS/XAES measurements. Core level lines, valence band spectra and Auger transitions were related to changes in surface chemistry and band bending. Both high resolution chemical shifts and the Auger parameter concept were used for the identification of chemical species. Sulfurization was performed by dipping the chemically cleaned sample into a (NH4)(2)S solution or by exposing it to S-2 or H2S molecules in UHV. Depending on the source and on the annealing temperature several sulfur compounds were observed on the surface and identified as sulfides with sulfur substituting phosphorus or with sulfur as surface atom, and as polysulfide probably with one sulfur atom in a terminal position. Changes of surface Fermi energy position and thus band bending were investigated.
引用
收藏
页码:434 / 440
页数:7
相关论文
共 16 条
  • [1] X-RAY PHOTOELECTRON SPECTROSCOPIC CORE-LEVEL SHIFTS OF PHOSPHORUS IN PHOSPHATES AND NATIVE OXIDE LAYERS ON INP(100) - APPLICATIONS OF THE AUGER PARAMETER CONCEPT
    CHASSE, T
    FRANKE, R
    URBAN, C
    FRANZHELD, R
    STREUBEL, P
    MEISEL, A
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1993, 62 (03) : 287 - 308
  • [2] THE ADSORPTION OF H2S ON INP(110) AND GAP(110)
    DUDZIK, E
    WHITTLE, R
    MULLER, C
    MCGOVERN, IT
    NOWAK, C
    MARKL, A
    HEMPELMANN, A
    ZAHN, DRT
    CAFOLLA, A
    BRAUN, W
    [J]. SURFACE SCIENCE, 1994, 307 (pt A) : 223 - 227
  • [3] (NH4)2SX-TREATED INP(001) STUDIED BY HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY
    FUKUDA, Y
    SUZUKI, Y
    SANADA, N
    SASAKI, S
    OHSAWA, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) : 3059 - 3062
  • [4] ADSORPTION OF SULFUR ON (100) AND (111) FACES OF PLATINUM - LEED AND AES STUDY
    HEEGEMANN, W
    MEISTER, KH
    BECHTOLD, E
    HAYEK, K
    [J]. SURFACE SCIENCE, 1975, 49 (01) : 161 - 180
  • [5] CHEMICAL-SHIFTS OF AUGER-ELECTRON LINES AND ELECTRON-BINDING ENERGIES IN FREE MOLECULES - SILICON-COMPOUNDS
    KELFVE, P
    BLOMSTER, B
    SIEGBAHN, H
    SIEGBAHN, K
    SANHUEZA, E
    GOSCINSKI, O
    [J]. PHYSICA SCRIPTA, 1980, 21 (01): : 75 - 88
  • [6] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY ON INP TREATED BY SULFUR-CONTAINING-COMPOUNDS
    KWOK, RWM
    LAU, WM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 2515 - 2520
  • [7] INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE ON SULFIDE PASSIVATED INP
    LAU, WM
    JIN, S
    WU, XW
    INGREY, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 848 - 855
  • [8] STRUCTURE OF S-PASSIVATED INP(100)-(1X1) SURFACE
    LU, ZH
    GRAHAM, MJ
    FENG, XH
    YANG, BX
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (22) : 2773 - 2775
  • [9] MONCH W, 1993, SEMICONDUCTOR SURFAC, P87
  • [10] SOFT-X-RAY PHOTOEMISSION CHARACTERIZATION OF THE H2S EXPOSED SURFACE OF PARA-INP
    NELSON, AJ
    FRIGO, S
    ROSENBERG, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 6086 - 6089