共 16 条
- [2] THE ADSORPTION OF H2S ON INP(110) AND GAP(110) [J]. SURFACE SCIENCE, 1994, 307 (pt A) : 223 - 227
- [5] CHEMICAL-SHIFTS OF AUGER-ELECTRON LINES AND ELECTRON-BINDING ENERGIES IN FREE MOLECULES - SILICON-COMPOUNDS [J]. PHYSICA SCRIPTA, 1980, 21 (01): : 75 - 88
- [6] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY ON INP TREATED BY SULFUR-CONTAINING-COMPOUNDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 2515 - 2520
- [7] INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE ON SULFIDE PASSIVATED INP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 848 - 855
- [8] STRUCTURE OF S-PASSIVATED INP(100)-(1X1) SURFACE [J]. APPLIED PHYSICS LETTERS, 1992, 60 (22) : 2773 - 2775
- [9] MONCH W, 1993, SEMICONDUCTOR SURFAC, P87