P-TYPE ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY - EVIDENCE OF NONRADIATIVE RECOMBINATION CENTERS IN MODERATELY TO HEAVILY-DOPED MATERIAL

被引：3

作者：

CALHOUN, LC ^{[1
]}

ROULEAU, CM ^{[1
]}

JEON, MH ^{[1
]}

PARK, RM ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(94)90832-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present data in this paper which demonstrate that the luminescence efficiency of p-type ZnSe: N grown by molecular beam epitaxy using a remote RF plasma source is a strong function of doping concentration and that in moderately to heavily doped material (corresponding to N(A) - N(D) greater-than-or-equal-to 2 X 10(17) cm-3) significant concentrations of non-radiative recombination centers strongly limit the luminescence efficiency of the material. Such data were obtained by performing real-time, in situ cathodoluminescence intensity measurements during epilayer growth for variously doped epilayers.

引用

页码：352 / 356

页数：5

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