CHARACTERISTICS OF DOPED OXIDES AND THEIR USE IN SILICON DEVICE FABRICATION

被引：17
作者：
BROWN, DM
GHEZZO, M
GARFINKEL, M
TENNEY, A
TAFT, EA
WONG, J
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1972年 / 17卷 / DEC期
关键词：
D O I：
10.1016/0022-0248(72)90258-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：276 / +
页数：1
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