INVESTIGATION OF BORON-DOPED ION-IMPLANTED LAYERS IN SILICON USING THE HALL-CURRENT METHOD

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作者：
ZHARKIKH, YS
LYSOCHENKO, SV
MOSKALENKO, NI
POLISHCHUK, YY
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SOVIET MICROELECTRONICS | 1980年 / 9卷 / 02期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：102 / 105
页数：4
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