A RELIABLE FABRICATION TECHNIQUE FOR VERY LOW RESISTANCE OHMIC CONTACTS TO PARA-INGAAS USING LOW-ENERGY AR+ ION-BEAM SPUTTERING

被引：7

作者：

STAREEV, G

UMBACH, A

机构：

[1] Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, Berlin 10, 1000

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 12期

关键词：

INGAAS; PARA-TYPE OHMIC CONTACT; SPUTTER CLEANING; HOMOGENEITY; RELIABILITY;

D O I：

10.1007/BF03030207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new fabrication technique for ohmic Au/Pt/Ti contacts to p-InGaAs is presented employing anodic oxidization and sputter etching by low energy Ar+ ions prior to the metal deposition. This cleaning procedure was found to be superior to wet chemical pre-etching as it provides low resistivity contacts with excellent homogeneity and good uniformity after rapid thermal processing (RTP).

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页码：1059 / 1063

页数：5

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