DENSITY OF STATES SPECTROSCOPY IN P-TYPE A-SI-H AND A-SIC-H

被引：0

作者：

CRANDALL, RS

SALAMON, SJ

XU, YQ

机构：

[1] Solar Energy Research Institute, Golden, CO 80401

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80118-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using a closed torm expression for differential junction capacitance applicable when the density of states (DOS) varies exponentially with energy, we analyze p/n junction capacitance measurements that probe the DOS in boron doped hydrogenated amorphous silicon and silicon carbide alloy. In both materials the p-layer DOS increases exponentially with energy above the Fermi level.

引用

页码：311 / 314

页数：4

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