CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES

被引：70

作者：

GIBBONS, JF ^{[1
]}

LEE, KF ^{[1
]}

MAGEE, TJ ^{[1
]}

PENG, J ^{[1
]}

ORMOND, R ^{[1
]}

机构：

[1] ADV RES & APPLICAT CORP,SUNNYVALE,CA 94086

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 12期

关键词：

D O I：

10.1063/1.90699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A polycrystalline silicon film 0.55 μm thick was deposited in a low-pressure CVD reactor on a Si3N4 substrate. Islands of various sizes (2×20 μm up to 20×160 μm) were prepared by standard photolithographic techniques. Laser annealing was then performed under conditions which are known to cause an increase in grain size from ∼500 Å to long narrow crystals of 2×25 μm in a continuous polysilicon film. These same conditions were found to produce single-crystal 〈100〉 material in the (2×20 μm) islands. However, 25×25-μm and 20×160-μm islands remain polycrystalline after the laser scan.

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页码：831 / 833

页数：3

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