ELECTRON AND HOLE-CAPTURE COEFFICIENT OF INDIUM IN SILICON AT LOW TEMPERATURES

被引：7
|
作者：
PREIER, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 01期
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D O I：
10.1063/1.1655731
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：194 / &
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