NONPOLARIZED MEMORY-SWITCHING CHARACTERISTICS OF ZNTE THIN-FILMS

被引：29

作者：

OTA, T ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, DEPT ELECTR, MEGURO, TOKYO, JAPAN

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 10期

关键词：

D O I：

10.1016/0038-1101(73)90136-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1089 / +

页数：1

共 26 条

[1]

Alder David, 1972, J NON-CRYST SOLIDS, V8-10, P538

[2] BISTABLE CONDUCTIVITY AND SWITCHING IN CDSE OR CDTE SANDWICHED LAYERS [J].

ANTIC, BM ;

SINHA, APB .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (07) :1259-&

[3] SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].

ARGALL, F .

SOLID-STATE ELECTRONICS, 1968, 11 (05) :535-&

[4]

BERFLUND CN, 1971, P IEEE, V59, P1099

[5] BISTABLE ELECTRICAL SWITCHING IN POLYMER THIN FILMS [J].

CARCHANO, H ;

LACOSTE, R ;

SEGUI, Y .

APPLIED PHYSICS LETTERS, 1971, 19 (10) :414-&

[6] AVALANCHE INJECTION IN CDS FILMS [J].

CHOPRA, KL .

PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1242-&

[7] DEPENDENCE OF ELECTROPHYSICAL PROPERTIES OF ZNTE THIN-FILMS ON STOICHIOMETRY [J].

CIORASCU, F ;

STANESCU, C ;

SPINULES.I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 9 (02) :449-&

[8] MODEL FOR RESISTIVE-CONDUCTIVE TRANSITION IN REVERSIBLE RESISTANCE-SWITCHING SOLIDS [J].

COOK, EL .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :551-&

[9] AN ELECTRON DIFFRACTION STUDY OF ZINC TELLURIDE AND ZINC SELENIDE FILMS [J].

DHERE, NG ;

GOSWAMI, A .

THIN SOLID FILMS, 1969, 3 (06) :439-&

[10] SWITCHING PROPERTIES OF THIN NIO FILMS [J].

GIBBONS, JF ;

BEADLE, WE .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&

← 1 2 3 →