NEAR ROOM-TEMPERATURE CONTINUOUS-WAVE LASING CHARACTERISTICS OF GAINASP/INP SURFACE-EMITTING LASER

被引：85
作者：
BABA, T
YOGO, Y
SUZUKI, K
KOYAMA, F
IGA, K
机构：
[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Midori-ku, Yokohama 227
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 10期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19930609
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first near room temperature continuous wave lasing operation of a GaInAsP/InP surface emitting laser has been achieved by employing a buried heterostructure and a novel MgO/Si heatsink mirror. A dramatic reduction of threshold current at room temperature and a circular narrow output beam were demonstrated.
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收藏
页码：913 / 914
页数：2
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