ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON

被引:26
作者
CARLSON, RO
机构
来源
PHYSICAL REVIEW | 1955年 / 100卷 / 04期
关键词
D O I
10.1103/PhysRev.100.1075
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1075 / 1078
页数:4
相关论文
共 12 条
[1]  
BROOKS H, 1951, PHYS REV, V83, P879
[2]   THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].
CONWELL, E ;
WEISSKOPF, VF .
PHYSICAL REVIEW, 1950, 77 (03) :388-390
[3]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[4]   HALL MOBILITY OF ELECTRONS AND HOLES IN SILICON [J].
DEBYE, PP ;
KOHANE, T .
PHYSICAL REVIEW, 1954, 94 (03) :724-725
[5]   NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].
ERGINSOY, C .
PHYSICAL REVIEW, 1950, 79 (06) :1013-1014
[6]   THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J].
FRITZSCHE, H ;
LARKHOROVITZ, K .
PHYSICA, 1954, 20 (10) :834-844
[7]   SEEBECK EFFECT IN SILICON [J].
GEBALLE, TH ;
HULL, GW .
PHYSICAL REVIEW, 1955, 98 (04) :940-947
[8]   DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].
HORN, FH .
PHYSICAL REVIEW, 1955, 97 (06) :1521-1525
[9]   RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J].
HUNG, CS ;
GLIESSMAN, JR .
PHYSICAL REVIEW, 1954, 96 (05) :1226-1236
[10]   ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 96 (01) :28-35