LOW-TEMPERATURE BUFFER GAAS-MESFET TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUIT APPLICATIONS

被引：14
作者：
DELANEY, MJ
CHOU, CS
LARSON, LE
JENSEN, JF
DEAKIN, DS
BROWN, AS
HOOPER, WW
THOMPSON, MA
MCCRAY, LG
ROSENBAUM, SE
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 08期
关键词：
D O I：
10.1109/55.31755
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：355 / 357
页数：3
相关论文
共 13 条
[1]   BACKGATING IN GAAS/(AL, GA)AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND ITS REDUCTION WITH A SUPERLATTICE [J].
ARNOLD, D ;
KLEM, J ;
HENDERSON, T ;
MORKOC, H ;
ERICKSON, LP .
APPLIED PHYSICS LETTERS, 1984, 45 (07) :764-766
[2]  
BIRRITELLA MS, 1985, IEEE T DEVICES, V29, P1135
[3]  
DAVANZO D, 1982, IEEE T ELECTRON DEV, V29, P1051
[4]   BACKGATING CHARACTERISTICS OF MODFET STRUCTURES [J].
EZIS, A ;
LANGER, DW .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :494-496
[5]  
Jensen J. F., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P476
[6]   A SOURCE COUPLED FET LOGIC - A NEW CURRENT-MODE APPROACH TO GAAS LOGICS [J].
KATSU, S ;
NAMBU, S ;
SHIMANO, A ;
KANO, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1114-1118
[7]   CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS [J].
LEE, CP ;
LEE, SJ ;
WELCH, BM .
ELECTRON DEVICE LETTERS, 1982, 3 (04) :97-98
[8]   SHIELDING OF BACKGATING EFFECTS IN GAAS INTEGRATED-CIRCUITS [J].
LEE, CP ;
CHANG, MF .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :169-171
[9]  
Mishra U. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P829
[10]  
PAULSON WM, 1982, TECH DIG GAAS IC S, P166
12