REACTIVELY SPUTTERED SILICON OXYNITRIDE AS A DIELECTRIC MATERIAL FOR METAL-INSULATOR-METAL CAPACITORS

被引：21
|
作者：
FRANK, RI
MOBERG, WL
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 04期
关键词：
D O I：
10.1149/1.2407560
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：524 / &
相关论文
共 50 条
  • [1] Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors
    Remmel, T
    Ramprasad, R
    Roberts, D
    Raymond, M
    Martin, M
    Qualls, D
    Luckowski, E
    Braithwaite, S
    Miller, M
    Walls, J
    2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 573 - 574
  • [2] Dielectric Properties Investigation of Metal-Insulator-Metal (MIM) Capacitors
    Xiong, Li
    Hu, Jin
    Yang, Zhao
    Li, Xianglin
    Zhang, Hang
    Zhang, Guanhua
    MOLECULES, 2022, 27 (12):
  • [3] How to monitor metal-insulator-metal (MIM) capacitors dielectric reliability
    Martinez, V.
    Besset, C.
    Monsieur, F.
    Ney, D.
    Montes, L.
    Ghibaudo, G.
    2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2008, : 537 - +
  • [4] Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors
    Karthik, R.
    Kannadassan, D.
    Baghini, Maryam Shojaei
    Mallick, P. S.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (12) : 9938 - 9943
  • [5] Time dependent breakdown characteristics of parylene dielectric in metal-insulator-metal capacitors
    Gowrisanker, S.
    Quevedo-Lopez, M. A.
    Alshareef, H. N.
    Gnade, B. E.
    ORGANIC ELECTRONICS, 2009, 10 (05) : 1024 - 1027
  • [6] Influence of the electrode material on HfO2 metal-insulator-metal capacitors
    Wenger, Ch.
    Lukosius, M.
    Muessig, H. -J.
    Ruhl, G.
    Pasko, S.
    Lohe, Ch.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01): : 286 - 289
  • [7] Qualification of silicon based oxide and nitride films for metal-insulator-metal capacitors
    Sharma, N.
    Hooda, M.
    Sharma, S. K.
    MATERIALS EXPRESS, 2018, 8 (03) : 223 - 233
  • [8] Ferroelectric of HfO2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors
    Juan, P. C.
    Lin, K. C.
    Chu, H. Y.
    Kuo, Y. C.
    Wang, H. W.
    Shih, T. Y.
    MICROELECTRONICS RELIABILITY, 2018, 83 : 242 - 248
  • [9] Design and characterization of metal-insulator-metal metal finger capacitors
    Subramaniam, Kalavathi
    Kordesch, Albert Victor
    Esa, Mazlina
    2007 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2007, : 150 - +
  • [10] High-Performance Metal-Insulator-Metal Capacitors Using Europium Oxide as Dielectric
    Padmanabhan, Revathy
    Bhat, Navakanta
    Mohan, S.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (05) : 1364 - 1370
12345