OBSERVATION OF GAAS (001) SURFACES AT HIGH-TEMPERATURES BY SCANNING-TUNNELING-MICROSCOPY

被引：4

作者：

YAMAGUCHI, H ^{[1
]}

KASU, M ^{[1
]}

SUEYOSHI, T ^{[1
]}

SATO, T ^{[1
]}

IWATSUKI, M ^{[1
]}

机构：

[1] JEOL LTD, AKISHIMA, TOKYO 196, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90792-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The structure of a GaAs (001) surface is studied by scanning tunneling microscopy at high sample temperatures up to 500-degrees-C. Below 460-degrees-C, a stable missing dimer row structure is clearly observed. At 480-degrees-C, however, the observed structures become disordered and change shape from image to image. This indicates that the thermal motion causes the migration of surface atoms as well as the desorption from the surface at this sample temperature.

引用

页码：1064 / 1067

页数：4

共 7 条

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