ENERGY-TRANSPORT NUMERICAL-SIMULATION OF GRADED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：37

作者：

AZOFF, EM ^{[1
]}

机构：

[1] RUTHERFORD APPLETON LAB, SEMICOND DEVICE PHYS, DIDCOT OX11 0QX, OXON, ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 04期

关键词：

D O I：

10.1109/16.22464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：609 / 616

页数：8

共 50 条

[41] MODELING THE AVALANCHE MULTIPLICATION CURRENT OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
LIOU, JJ
LIOU, LL
HUANG, CI
BAYRAKTAROGLU, B
SOLID-STATE ELECTRONICS, 1993, 36 (08) : 1217 - 1221
[42] NEGATIVE OUTPUT DIFFERENTIAL RESISTANCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
GAO, GB
FAN, ZF
MORKOC, H
APPLIED PHYSICS LETTERS, 1992, 61 (02) : 198 - 200
[43] CURRENT TRANSPORT MECHANISM IN N-P-N GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
MORGAN, DV
REZAZADEH, AA
GEC JOURNAL OF RESEARCH, 1988, 6 (01): : 37 - 43
[44] THERMAL-RESISTANCE MEASUREMENTS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ADLERSTEIN, MG
ZAITLIN, MP
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) : 1553 - 1554
[45] AN ANALYTICAL MODEL FOR THE CURRENT TRANSPORT OF GRADED HETEROJUNCTION BIPOLAR-TRANSISTORS
LIOU, JJ
SOLID-STATE ELECTRONICS, 1995, 38 (04) : 946 - 948
[46] DIRECT MEASUREMENT OF THE POTENTIAL SPIKE ENERGY IN ALGAAS GAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
LIN, HH
LEE, SC
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) : 431 - 433
[47] TEMPERATURE DEPENDENCES OF CURRENT GAINS IN GAINP/GAAS AND ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
LIU, W
FAN, SK
HENDERSON, T
DAVITO, D
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (07) : 1351 - 1353
[48] COMPOSITIONALLY GRADED EMITTER INGA(AS)P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
NITTONO, T
WATANABE, N
ISHIBASHI, T
ELECTRONICS LETTERS, 1994, 30 (25) : 2174 - 2175
[49] TRANSPORT AND NOISE IN GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS .1. TRANSPORT AND HIGH-CURRENT GAIN
DAY, DJ
JUE, SC
MARGITTAI, A
HOUSTON, PA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) : 1015 - 1019
[50] CURRENT TRANSPORT MECHANISM IN GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
LIU, W
FAN, SK
KIM, TS
BEAM, EA
DAVITO, DB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) : 1378 - 1383

← 1 2 3 4 5 →