ENERGY-TRANSPORT NUMERICAL-SIMULATION OF GRADED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：37
|
作者：
AZOFF, EM [1 ]
机构：
[1] RUTHERFORD APPLETON LAB, SEMICOND DEVICE PHYS, DIDCOT OX11 0QX, OXON, ENGLAND
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 04期
关键词：
D O I：
10.1109/16.22464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：609 / 616
页数：8
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