ENERGY-TRANSPORT NUMERICAL-SIMULATION OF GRADED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：37

作者：

AZOFF, EM ^{[1
]}

机构：

[1] RUTHERFORD APPLETON LAB, SEMICOND DEVICE PHYS, DIDCOT OX11 0QX, OXON, ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 04期

关键词：

D O I：

10.1109/16.22464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：609 / 616

页数：8

共 50 条

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