LIFETIME OF INJECTED CARRIERS IN GERMANIUM

被引：43

作者：

NAVON, D

BRAY, R

FAN, HY

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1952年 / 40卷 / 11期

关键词：

D O I：

10.1109/JRPROC.1952.273959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1342 / 1347

页数：6

共 7 条

[1] DEPENDENCE OF RESISTIVITY OF GERMANIUM ON ELECTRIC FIELD [J].

BRAY, R .

PHYSICAL REVIEW, 1949, 76 (01) :152-153

[2]

BRAY R, 1949, PHYS REV, V76, P458

[3]

FAN HY, 1949, PURDUE SEMICONDUCTOR, P6

[4] THEORY AND EXPERIMENT FOR A GERMANIUM P-N JUNCTION [J].

GOUCHER, FS ;

PEARSON, GL ;

SPARKS, M ;

TEAL, GK ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (04) :637-638

[5] MEASUREMENT OF HOLE DIFFUSION IN N-TYPE GERMANIUM [J].

GOUCHER, FS .

PHYSICAL REVIEW, 1951, 81 (03) :475-475

[6]

SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P60

[7]

TAYLOR WE, 1949, PURDUE SEMICONDUCTOR