IONIZATION OF LOW DONOR LEVELS AND RECOMBINATION OF HOT-ELECTRONS IN N-SI AT LOW-TEMPERATURES

被引：44

作者：

ASCHE, M ^{[1
]}

KOSTIAL, H ^{[1
]}

SARBEY, OG ^{[1
]}

机构：

[1] ACAD SCI UKSSR,INST PHYS,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 91卷 / 02期

关键词：

D O I：

10.1002/pssb.2220910217

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The concentration of electrons and the decay time of carriers additionally excited from the donor states are measured in dependence on the electric field strength in n‐Si in the temperature region of partial freezing out. From these data the parameters characterizing the processes of phonon assisted and impact ionization and recombination are determined. It is shown that at not too low temperatures the Auger recombination and the impact ionization at weak electric field strength are noticeable and are determined by the contribution of the highly excited states of the donors. The phonon assisted recombination is described by the improved model of the cascade process including intervalley scattering of the electrons. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：521 / 530

页数：10

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