GROWTH OF HEXAGONAL ZNS THIN-FILMS BY MOCVD USING CS2 GAS AS A SULFUR SOURCE

High-quality ZnS films have been grown on glass and (111)Si substrates in the temperature range of 300-450 degree C by a low-pressure MOCVD technique using carbon disulfide (CS//2) as a sulfur source. The diethylzinc-CS//2 (DEZ-CS//2) system did not exhibit a premature reaction. The reaction process in this system is described. Films grown on glass substrates were hexagonal ZnS with a high degree of c-axis orientation. The full width at half maximum of the X-ray diffraction peak of 0. 18 degree was obtained for the films grown at a substrate temperature of 400 degree C with a left bracket CS//2 right bracket / left bracket DEZ right bracket flow rate ratio of 10. Bright orange electroluminescence was observed in a thin film electroluminescent device with a manganese-doped MOCVD-grown ZnS emitting layer.