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- [2] NEA PHOTOCATHODES BASED ON GAAS1-XSBX SOLID-SOLUTIONS - THEIR APPLICATION IN PHOTOMULTIPLIERS PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (14): : 833 - 835
- [3] IMPACT IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN NARROW-GAP SOLID-SOLUTIONS BASED ON INAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (03): : 338 - 339
- [4] COMPOSITION AND TEMPERATURE DEPENDENCES OF THE QUANTUM EFFICIENCY OF THE PHOTOLUMINESCENCE EMITTED BY GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 780 - 783
- [5] PROBLEM OF THE MECHANISM OF BREAKDOWN OF P-N-JUNCTIONS MADE OF GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 84 - 87
- [6] DRIFT VELOCITY OF ELECTRONS IN COMBINATIONS GAAS1-XSBX RADIOTEKHNIKA I ELEKTRONIKA, 1976, 21 (08): : 1789 - 1792
- [7] INFLUENCE OF DISLOCATIONS ON THE REVERSE CURRENT IN P-N-JUNCTIONS FORMED IN GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (07): : 761 - 765
- [8] INFLUENCE OF AN INHOMOGENEOUS DISTRIBUTION OF IMPURITIES ON PHOTOELECTRIC CHARACTERISTICS OF RESISTOR STRUCTURES BASED ON GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 491 - 494
- [10] PHOTO-LUMINESCENCE OF GAAS1-XSBX AND GA1-XINXAS (X-LESS-THAN-0.01) SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 68 - 72