IDENTIFICATION OF VACANCY DEFECTS IN COMPOUND SEMICONDUCTORS BY CORE-ELECTRON ANNIHILATION - APPLICATION TO INP

被引:229
作者
ALATALO, M
KAUPPINEN, H
SAARINEN, K
PUSKA, MJ
MAKINEN, J
HAUTOJARVI, P
NIEMINEN, RM
机构
[1] Laboratory of Physics, Helsinki University of Technology
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 07期
关键词
D O I
10.1103/PhysRevB.51.4176
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that the Doppler broadening of positron annihilation radiation can be used in the identification of vacancy defects in compound semiconductors. Annihilation of trapped positrons with surrounding core electrons reveals chemical information that becomes visible when the experimental backgorund is reduced by the coincidence technique. We also present a simple calculational scheme to predict the high-momentum part of the annihilation line. The utility of the method is demonstrated by providing results for vacancies in InP. In electron irradiated InP the isolated In and P vacancies are distinguished from each other by the magnitude of the core-electron annihilation. In heavily Zn-doped InP we detect a native vacancy defect and identify it to a P vacancy decorated by Zn atoms. © 1995 The American Physical Society.
引用
收藏
页码:4176 / 4185
页数:10
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