THEORETICAL CALCULATION OF LONGITUDINAL-OPTICAL-PHONON LIFETIME IN GAAS

被引：46

作者：

BHATT, AR ^{[1
]}

KIM, KW ^{[1
]}

STROSCIO, MA ^{[1
]}

机构：

[1] USA, RES OFF, RES TRIANGLE PK, NC 27709 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.358498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The anharmonic decay of longitudinal-optical (LO) phonons in zinc-blende semiconductors has been studied. Based on an approach in which the anharmonic crystal potential is estimated using the theory of elasticity, the lifetime of LO phonons via emission of two acoustic phonons is calculated as a function of lattice temperature and phonon wave vector. Application of this model to bulk GaAs shows an excellent agreement with available experimental data. Since the parameters employed in the model can be obtained experimentally, the approach provides a useful tool to investigate LO-phonon lifetimes in semiconductors.

引用

页码：3905 / 3907

页数：3

共 21 条

[11] ANHARMONIC DECAY OF OPTICAL PHONONS [J].