PHOTOLUMINESCENCE SPECTRA OF PARA TYPE GAAS1-XPX SOLID-SOLUTIONS IN DIRECT AND INDIRECT COMPOSITION REGIONS

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作者：

ALFEROV, ZI

ZHILYAEV, YV

KOPEV, PS

GARBUZOV, DZ

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1972年 / 6卷 / 04期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：589 / &

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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2751 - +
[25] GUSANO DA, 1964, APPL PHYS LETTERS, V5, P144
[26] ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
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[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1830 - &
[27] EFFECT OF DONOR IMPURITIES ON DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) - (S SE AND TE DOPING - EFFECT ON JUNCTION LASER WAVELENGTH - E/T)
HOLONYAK, N
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[J]. APPLIED PHYSICS LETTERS, 1966, 8 (04) : 83 - &
[28] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS
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[J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 82 - 83
[29] IGLITSYN MI, 1969, SOV PHYS SEMICOND+, V3, P19
[30] IGLITSYN MI, 1967, SOV PHYS SEMICOND+, V1, P56

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