ELECTRICAL CHARACTERISTICS OF DIRECTLY-BONDED GAAS AND INP

被引：100
作者：
WADA, H
OGAWA, Y
KAMIJOH, T
机构：
[1] Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd., Higashiasakawa, Hachioji
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期
关键词：
D O I：
10.1063/1.108855
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical characteristics of directly bonded GaAs/InP heterointerfaces have been investigated for the first time. The mirror-polished surfaces of GaAs and InP wafers were put face to face and bonded by heat treatment at temperatures ranging from 450 to 700-degrees-C. The wafers were successfully bonded without using any solders at all the temperatures tested. 1.3 mum InP/GaInAsP lasers were fabricated on GaAs substrates using direct bonding at 450-degrees-C, and room-temperature lasing operation has been achieved with the threshold current identical to that of conventional InP lasers.
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页码：738 / 740
页数：3
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