COMPLEX NATURE OF GOLD-RELATED DEEP LEVELS IN SILICON

被引：223
作者：
LANG, DV
GRIMMEISS, HG
MEIJER, E
JAROS, M
机构：
[1] LUND INST TECHNOL,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN
[2] UNIV NEWCASTLE UPON TYNE,DEPT THEORET PHYS,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND
来源：
PHYSICAL REVIEW B | 1980年 / 22卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.22.3917
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3917 / 3934
页数：18
相关论文
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