COMPLEX NATURE OF GOLD-RELATED DEEP LEVELS IN SILICON

被引：223

作者：

LANG, DV

GRIMMEISS, HG

MEIJER, E

JAROS, M

机构：

[1] LUND INST TECHNOL,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN

[2] UNIV NEWCASTLE UPON TYNE,DEPT THEORET PHYS,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.22.3917

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3917 / 3934

页数：18

共 61 条

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[2] THERMAL CAPTURE CROSS-SECTION OF FREE-ELECTRONS AT NEUTRAL GOLD CENTERS IN N-TYPE SILICON
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[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON
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[5] THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION
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[6] OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON
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GRIMMEISS, HG
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2658 - 2665
[7] ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 667 - 671
[8] PROPERTIES OF GOLD IN SILICON
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[J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &
[9] PROPERTIES OF GOLD-DOPED SILICON
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GALLAGHER, CJ
[J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173
[10] LIFETIMES AND CAPTURE CROSS SECTIONS IN GOLD-DOPED SILICON
DAVIS, WD
[J]. PHYSICAL REVIEW, 1959, 114 (04): : 1006 - 1008

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