INFLUENCE OF THE TECHNOLOGY OF FORMATION OF A-SI-H ON RADIATIVE RECOMBINATION

被引：0

作者：

ATAEV, Z

VASILEV, VA

VOLKOV, AS

KONKOV, OI

TERUKOV, EI

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 03期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：305 / 307

页数：3

共 6 条

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CARLSON, DE
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 503 - 518
[2] PHOTOLUMINESCENCE IN AMORPHOUS SILICON
ENGEMANN, D
FISCHER, R
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (01): : 195 - 202
[3] FRITZSCHE H, 1980, SOL ENERG MATER, V3, P477
[4] GOLIKOVA OA, 1989, SOV PHYS SEMICOND+, V23, P281
[5] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
STREET, RA
[J]. ADVANCES IN PHYSICS, 1981, 30 (05) : 593 - 676
[6] LUMINESCENCE STUDIES OF PLASMA-DEPOSITED HYDROGENATED SILICON
STREET, RA
KNIGHTS, JC
BIEGELSEN, DK
[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1880 - 1891