UNPINNED GAAS AND INP SCHOTTKY DIODES WITH AN EPITAXIAL SILICON INTERFACIAL LAYER

被引：0

作者：

COSTA, JC ^{[1
]}

WILLIAMSON, F ^{[1
]}

MILLER, TJ ^{[1
]}

NATHAN, MI ^{[1
]}

MUI, D ^{[1
]}

STRITE, S ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 112期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：189 / 189

页数：1

共 50 条

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