UNPINNED GAAS AND INP SCHOTTKY DIODES WITH AN EPITAXIAL SILICON INTERFACIAL LAYER

被引：0
作者：
COSTA, JC [1 ]
WILLIAMSON, F [1 ]
MILLER, TJ [1 ]
NATHAN, MI [1 ]
MUI, D [1 ]
STRITE, S [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 112期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：189 / 189
页数：1
相关论文
共 50 条
  • [31] INTERFACE STATES OF AG/(110)GAAS SCHOTTKY DIODES WITHOUT AND WITH INTERFACIAL LAYERS
    PLATEN, W
    SCHMUTZLER, HJ
    KOHL, D
    BRAUCHLE, KA
    WOLTER, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 218 - 224
  • [32] The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer
    Ozdemir, A. F.
    Salari, M. Abdolahpour
    Kokce, A.
    Ucar, N.
    [J]. ACTA PHYSICA POLONICA A, 2017, 132 (03) : 1118 - 1121
  • [33] Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer
    Dokme, I.
    Tunc, T.
    Altindal, S.
    Uslu, I.
    [J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (08): : 1225 - 1228
  • [34] THE ELECTRICAL CHARACTERISTICS OF INP SCHOTTKY DIODES
    HATTORI, K
    IZUMI, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5699 - 5701
  • [35] Characteristics of surface mount low barrier silicon Schottky diodes with boron contamination in the substrate-epitaxial layer interface
    Pal, Debdas
    Hoag, David
    Barter, Margaret
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (05)
  • [36] Double epitaxial layer power Schottky diodes with end in the ramp oxide technique
    Badila, M
    Brezeanu, G
    [J]. MICROELECTRONICS JOURNAL, 1996, 27 (01) : 67 - 72
  • [37] Simple thermal diverging model of the thin epitaxial layer of InP laser diodes
    Byeong-Gwan Ji
    Seung-Gol Lee
    Se-Geun Park
    Beom-Hoan O
    [J]. Journal of the Korean Physical Society, 2015, 67 : 1175 - 1178
  • [38] ANALYSES OF TRANSIENT CAPACITANCE EXPERIMENTS FOR AU-GAAS SCHOTTKY-BARRIER DIODES IN PRESENCE OF DEEP IMPURITIES AND INTERFACIAL LAYER
    HUANG, CI
    LI, SS
    [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1481 - 1486
  • [39] Simple thermal diverging model of the thin epitaxial layer of InP laser diodes
    Ji, Byeong-Gwan
    Lee, Seung-Gol
    Park, Se-Geun
    O, Beom-Hoan
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 67 (07) : 1175 - 1178
  • [40] EFFECTS OF PHOTOCHEMICAL VAPOR-DEPOSITION PHOSPHORUS-NITRIDE INTERFACIAL LAYER ON ELECTRICAL CHARACTERISTICS OF AU-INP SCHOTTKY DIODES
    JEONG, YH
    KIM, GT
    KIM, ST
    KIM, KI
    CHUNG, WJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) : 6699 - 6700
12345