INFLUENCE OF DISORDERED CONTACTS ON THE 4-TERMINAL MEASUREMENTS OF INTEGRAL QUANTUM HALL-EFFECTS

被引：45

作者：

KOMIYAMA, S ^{[1
]}

HIRAI, H ^{[1
]}

SASA, S ^{[1
]}

FUJII, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,SEMICOND MAT LAB,ATSUGI 24301,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 73卷 / 02期

关键词：

D O I：

10.1016/0038-1098(90)91024-B

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Four-terminal resistance measurements are made on GaAs-AlGaAs heterostructure Hall-bar devices with and without a cross gate. When electrons are injected from disordered contacts, anomaly is observed in both longitudinal and Hall resistances in the integer quantum Hall regime. The results are interpreted by an analysis of a contact originally developed by Buttiker. © 1990.

引用

页码：91 / 95

页数：5

共 11 条

[1] ABSENCE OF BACKSCATTERING IN THE QUANTUM HALL-EFFECT IN MULTIPROBE CONDUCTORS [J].