共 50 条
- [1] AVALANCHE BREAKDOWN LUMINESCENCE OF DIFFUSED P-N-JUNCTIONS IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1211 - 1212
- [2] AVALANCHE MULTIPLICATION IN P-N-JUNCTIONS IN INAS1-XSBX SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 294 - 297
- [4] AVALANCHE MULTIPLICATION FACTOR AND REVERSE CURRENT OF SI P-N-JUNCTIONS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 123 - 129
- [6] FRACTAL-DIFFUSED P-N-JUNCTIONS IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (04): : 391 - 396
- [7] DIFFUSED P-N-JUNCTIONS IN CDGEAS2 SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 934 - 935
- [9] ANISOTROPY OF AVALANCHE BREAKDOWN IN SILICON P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1232 - 1234
- [10] ACCURATE CALCULATION OF THE IMPACT IONIZATION COEFFICIENTS FROM DATA ON AVALANCHE MULTIPLICATION IN ABRUPT P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1293 - 1294