INTRINSIC SURFACE STATES IN SEMICONDUCTORS

被引：70
作者：
JONES, RO
机构：
[1] Cavendish Laboratory, Cambridge
[2] Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY
来源：
PHYSICAL REVIEW LETTERS | 1968年 / 20卷 / 18期
关键词：
D O I：
10.1103/PhysRevLett.20.992
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Experimentally well established features of semiconductor surface-state distributions are explained in terms of a realistic model calculation. © 1968 The American Physical Society.
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页码：992 / &
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