IN-DEPTH OXYGEN CONTAMINATION PRODUCED IN SILICON BY PULSED LASER IRRADIATION

被引：11
作者：
GARULLI, A
SERVIDORI, M
VECCHI, I
机构：
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1980年 / 13卷 / 10期
关键词：
D O I：
10.1088/0022-3727/13/10/006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L199 / &
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