AUGER-ELECTRON SPECTROSCOPY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS-SURFACES EXPOSED TO TRIMETHYLGALLIUM

被引：3

作者：

OHNO, H

GOTO, S

NOMURA, Y

MORISHITA, Y

WATANABE, A

KATAYAMA, Y

机构：

[1] OPTOELECTR TECHNOL RES LAB,TSUKUBA,IBARAKI 30026,JAPAN

[2] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ Auger electron spectroscopy is employed to study the dynamics of the desorption process of carbon and its related species from clean molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium under the conditions where atomic layer epitaxy takes place by metalorganic molecular beam epitaxy. The direct real time spectroscopic observation of the surfaces by Auger electron spectroscopy shows that, after exposure to trimethylgallium, the initial carbon signal intensity exponentially decreases with an activation energy of 1.3 eV and reaches a steady state level.

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页码：2248 / 2250

页数：3

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