UO2 (111) Single Crystal: Comparison of Stoichiometric and Defective Surfaces by XPS

被引：10

作者：

Senanayake, Sanjaya D. ^{[1
]}

Idriss, Hicham ^{[1
]}

机构：

[1] Univ Auckland, Private Bag 92019, Auckland, New Zealand

来源：

SURFACE SCIENCE SPECTRA | 2006年 / 13卷 / 01期

关键词：

uranium dioxide; single crystal; 111; argon sputtered; oxygen defected; UO2-x; UO2+x; hypo-stoichiometric; hyper-stoichiometric; valence band; U; 4f; O; 1s;

D O I：

10.1116/11.20050601

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This work undertakes a photoelectron study of the surface of a uranium dioxide (111) single crystal. The formation of a defected surface with argon ions sputtering can be identified as an n-type semiconductor, UO2-x phase. Annealing to high temperatures under an oxygen pressure of similar to 5 x 10(-6) Torr for 30 min or more yielded the hyper-stoichiometric p-type semiconductor, UO2+x phase. A shift in the core level line of U4+ ions is observed and attributed to a shift in the Fermi level from hyper-stoichiometric UO2+x to sub-stoichiometric UO2-x. (C) 2007 American Vacuum Society.

引用

页码：72 / 80

页数：9

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