TIME-RESOLVED REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MONITORING OF THE SURFACE STRUCTURAL-CHANGES OF SI(111) DURING Q-SWITCHED LASER (532 NM) ANNEALING

被引：3
作者：
KITRIOTIS, D
AOYAGI, Y
机构：
[1] RIKEN, The Institute of Physical and Chemical Research, Wako-shi, Saitama
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 3B期
关键词：
SI(111); Q-SWITCHED LASER; ANNEALING; TIME-RESOLVED; RHEED; DEBYE-WALLER EFFECT; TRANSIENT PHASE;
D O I：
10.1143/JJAP.32.L441
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nanosecond surface structural changes during Q-switched laser annealing of a Si{111} crystal are studied with two-dimensional, time-resolved reflection of high-energy electron diffraction (RHEED) patterns obtained in real time synchronously with time-resolved optical reflectivity measurements. The detected Debye-Waller effect indicates the existence of a thermal process that results in melting of the surface. A transient crystalline surface phase is observed prior to recrystallization of the initial superstructure.
引用
收藏
页码：L441 / L443
页数：3
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