LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS

被引：28

作者：

FISHER, DG

ENSTROM, RE

WILLIAMS, BF

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 09期

关键词：

D O I：

10.1063/1.1653703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：371 / &

共 15 条

[1] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J].

BELL, RL ;

SPICER, WE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11) :1788-+

[2] MECHANISM OF WORK-FUNCTION REDUCTION BY OXYGEN ADSORPTION [J].

CHEN, JM .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) :5008-+

[3]

ENSTROM RE, UNPUBLISHED

[4]

ENSTROM RE, 1970, P INT S GAAS

[5] PHOTOEMISSION FROM CESIUM OXIDE COVERED GAINAS [J].

KLEIN, W .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4384-&

[6]

LIN YZ, 1969, APPL PHYS LETTERS, V14, P275

[7] THICKNESS OF CS AND CS-O FILMS ON GAAS(CS) AND GAAS(CS-O) PHOTOCATHODES [J].

SOMMER, AH ;

WHITAKER, HH ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1970, 17 (07) :273-&

[8] LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS [J].

SONNENBE.H .

APPLIED PHYSICS LETTERS, 1969, 14 (09) :289-&

[9]

THORNTON PR, 1968, SCANNING ELECTRON MI, P178

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J].

TIETJEN, JJ ;

AMICK, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :724-&

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