ANODIC-OXIDATION OF INP IN PURE WATER

被引：19
作者：
ROBACH, Y [1 ]
JOSEPH, J [1 ]
BERGIGNAT, E [1 ]
HOLLINGER, G [1 ]
机构：
[1] ECOLE CENT LYON,ELECTR LAB,CNRS,UA 848,F-69131 ECULLY,FRANCE
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 10期
关键词：
D O I：
10.1149/1.2096382
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2957 / 2959
页数：3
相关论文
共 9 条
  • [1] ASSESSMENT OF THE QUALITY OF ANODIC NATIVE OXIDES OF GAAS FOR MOS DEVICES
    BREEZE, PA
    HARTNAGEL, HL
    [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 51 - 61
  • [2] THE ANODIZATION OF INP
    DECOGAN, D
    EFTEKHARI, G
    TUCK, B
    [J]. THIN SOLID FILMS, 1982, 91 (03) : 277 - 281
  • [3] ELECTRICAL-PROPERTIES OF THIN ANODIC SILICON DIOXIDE LAYERS GROWN IN PURE WATER
    GASPARD, F
    HALIMAOUI, A
    SARRABAYROUSE, G
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (01): : 65 - 69
  • [4] GASPARD F, 1986, INSULATING FILMS SEM
  • [5] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER
    HASEGAWA, H
    HARTNAGEL, HL
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723
  • [6] ON THE CHEMISTRY OF PASSIVATED OXIDE-INP INTERFACES
    HOLLINGER, G
    JOSEPH, J
    ROBACH, Y
    BERGIGNAT, E
    COMMERE, B
    VIKTOROVITCH, P
    FROMENT, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1108 - 1112
  • [7] AN IMPROVED ANODIC OXIDE INSULATOR FOR INP METAL-INSULATED-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    LAUGHLIN, DH
    WILMSEN, CW
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 915 - 916
  • [8] SCHOTTKY AND FIELD-EFFECT TRANSISTOR FABRICATION ON INP AND GAINAS
    LOUALICHE, S
    LHARIDON, H
    LECORRE, A
    LECROSNIER, D
    SALVI, M
    FAVENNEC, PN
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 540 - 542
  • [9] CHEMICAL-COMPOSITION AND FORMATION OF THERMAL AND ANODIC OXIDE-III-V COMPOUND SEMICONDUCTOR INTERFACES
    WILMSEN, CW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 279 - 289
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