DEEP-LEVEL DOMINATED CURRENT VOLTAGE CHARACTERISTICS OF BURIED IMPLANTED OXIDE SILICON-ON-INSULATOR

被引：8
作者：
DAS, K
PALMOUR, JW
POSTHILL, JB
HUMPHREYS, TP
OSULLIVANFRENCH, J
BYRD, NJ
LU, D
WORTMAN, JJ
PARIKH, NR
机构：
[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599
[2] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期
关键词：
D O I：
10.1109/55.31693
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：135 / 137
页数：3
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