THE FORMATION OF A CONTINUOUS AMORPHOUS LAYER BY ROOM-TEMPERATURE IMPLANTATION OF BORON INTO SILICON

被引：40

作者：

JONES, KS

SADANA, DK

PRUSSIN, S

WASHBURN, J

WEBER, ER

HAMILTON, WJ

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] TRW,REDONDO BEACH,CA 90278

[3] CALTECH,JET PROP LAB,PASADENA,CA 91109

[4] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.341122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1414 / 1418

页数：5

共 13 条

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[9] SUBSTITUTIONAL PLACEMENT OF PHOSPHORUS IN ION-IMPLANTED SILICON BY RECRYSTALLIZING AMORPHOUS CRYSTALLINE INTERFACE [J].

SADANA, DK ;

WASHBURN, J ;

MAGEE, CW .

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[10]

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