REACTION-RATE CONSTANT OF SI ATOMS WITH SIH4 MOLECULES IN A RF SILANE PLASMA

被引：40

作者：

TANAKA, T ^{[1
]}

HIRAMATSU, M ^{[1
]}

NAWATA, M ^{[1
]}

KONO, A ^{[1
]}

GOTO, T ^{[1
]}

机构：

[1] MEIJO UNIV,FAC SCI & TECHNOL,DEPT ELECT & ELECTR ENGN,TEMPAKU KU,NAGOYA,AICHI 468,JAPAN

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1994年 / 27卷 / 08期

关键词：

D O I：

10.1088/0022-3727/27/8/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet absorption spectroscopy using a ring dye laser and a hollow cathode lamp was applied to measurement of Si(3p2, 1D2) and Si(3p2, P-3(2)) atom density decay in the afterglow of a radio frequency SiH4-Ar plasma. The dependence of the Si density decay rate on SiH4 and Ar partial pressures and also on the radio frequency input power was investigated, from which Si(3p2,1D2)-SiH4 reaction rate constant was determined to be (7.4 +/- 0.4) x 10(-10) cm3 molecule-1 s-1, the Si(3p2, P-3(2))-SiH4 reaction rate constant (3.5 +/- 1.0) x 10(-10) cm3 molecule-1 s-1 and the diffusion coefficient for Si(3p2, 1D2) in Ar (at 320 K) (4.0 +/- 0.8) X 10(4) cm2 Pa s-1.

引用

页码：1660 / 1663

页数：4

共 9 条

[1] ABSOLUTE RATE CONSTANTS FOR THE REACTION OF SIH WITH HYDROGEN, DEUTERIUM AND SILANE [J].

BEGEMANN, MH ;

DREYFUS, RW ;

JASINSKI, JM .

CHEMICAL PHYSICS LETTERS, 1989, 155 (4-5) :351-355

[2] MEASUREMENT OF THE DENSITY AND TRANSLATIONAL TEMPERATURE OF SI(3P2 1D2) ATOMS IN RF SILANE PLASMA USING UV LASER-ABSORPTION SPECTROSCOPY [J].

HIRAMATSU, M ;

SAKAKIBARA, M ;

MUSHIGA, M ;

GOTO, T .

MEASUREMENT SCIENCE AND TECHNOLOGY, 1991, 2 (11) :1017-1020

[3] COLLISIONAL QUENCHING OF ELECTRONICALLY EXCITED SILICON ATOMS, SI[3P2(1D2)], BY ATOMIC-ABSORPTION SPECTROSCOPY [J].

HUSAIN, D ;

NORRIS, PE .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1978, 74 :1483-1503

[4] ABSOLUTE RATE CONSTANTS FOR THE REACTION OF SILYLENE WITH HYDROGEN, SILANE, AND DISILANE [J].

JASINSKI, JM ;

CHU, JO .

JOURNAL OF CHEMICAL PHYSICS, 1988, 88 (03) :1678-1687

[5] LASER-INDUCED-FLUORESCENCE DETECTION OF SIH2 RADICALS IN A RADIOFREQUENCY SILANE PLASMA [J].

KONO, A ;

KOIKE, N ;

OKUDA, K ;

GOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (4A) :L543-L546

[6] MEASUREMENT OF SI ATOM DENSITY IN RADIOFREQUENCY SILANE PLASMA USING ULTRAVIOLET-ABSORPTION SPECTROSCOPY [J].

SAKAKIBARA, M ;

HIRAMATSU, M ;

GOTO, T .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (06) :3467-3471

[7] DIAGNOSTICS AND CONTROL OF LOW-PRESSURE PLASMAS FOR THE CHEMICAL VAPOR-DEPOSITION (CVD) OF AMORPHOUS-SEMICONDUCTOR AND INSULATOR FILMS [J].

TACHIBANA, K .

PURE AND APPLIED CHEMISTRY, 1988, 60 (05) :769-780

[8] DIFFUSION OF SI ATOMS AND THIN-FILM DEPOSITION IN A SILANE ARGON PLASMA [J].

TACHIBANA, K ;

TADOKORO, H ;

HARIMA, H ;

URANO, Y .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (01) :177-184

[9] MEASUREMENT OF ABSOLUTE DENSITIES AND SPATIAL DISTRIBUTIONS OF SI AND SIH IN AN RF-DISCHARGE SILANE PLASMA FOR THE CHEMICAL VAPOR-DEPOSITION OF A-SI-H FILMS [J].

TACHIBANA, K ;

MUKAI, T ;

HARIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7A) :L1208-L1211

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