INTRINSIC POINT-DEFECTS AND MICRODEFECTS IN GASB CRYSTALS DOPED WITH ELECTRIC ACTIVE IMPURITIES (SI, GE, TE)

被引：0

作者：

BUBLIK, VT ^{[1
]}

MOROZOV, AN ^{[1
]}

SMIRNOV, VM ^{[1
]}

MILVIDSKAYA, AG ^{[1
]}

KOLCHINA, GP ^{[1
]}

SAFONOV, YS ^{[1
]}

机构：

[1] MOSCOW RARE MET IND RES & DESIGN INST,MOSCOW,USSR

来源：

KRISTALLOGRAFIYA | 1992年 / 37卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：784 / 790

页数：7

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[7] GAAS HOMOGENEITY REGION AND POINT-DEFECT CONCENTRATION CALCULATION IN TERNARY-SYSTEMS GA-AS-ELECTRICALLY ACTIVE IMPURITY
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[8] USE OF PRECISION DENSITY AND LATTICE-PARAMETER MEASUREMENTS FOR STUDY OF POINT-DEFECTS IN SINGLE-CRYSTALS OF SEMICONDUCTORS .2. DETERMINATION OF HOMOGENEITY REGIONS OF COMPOUNDS, THE VEGARD LAW APPLICATION
MOROZOV, AN
BUBLIK, VT
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[9] MOROZOV AN, 1988, KRISTALLOGRAFIYA+, V33, P1213
[10] MOROZOV AN, 1987, ZH ANAL KHIM, V42, P617