THE DETECTION OF STRUCTURAL DEFECTS IN INDIUM-PHOSPHIDE BY ELECTROCHEMICAL ETCHING

被引:21
作者
ELLIOTT, CR
REGNAULT, JC
机构
关键词
D O I
10.1149/1.2127349
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:113 / 116
页数:4
相关论文
共 13 条
[1]  
ARITA K, 1979, J CRYSTAL GROWTH, V46, P783
[2]   PRELIMINARY STUDY OF DISLOCATIONS IN INDIUM AND GALLIUM PHOSPHIDES [J].
CLARKE, RC ;
ROBERTSON, DS ;
VERE, AW .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (09) :1349-1354
[3]  
ELLIOTT CH, UNPUBLISHED
[4]   ELECTROCHEMICAL SECTIONING AND SURFACE FINISHING OF GAAS AND GASB [J].
ELLIOTT, CR ;
REGNAULT, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1557-1562
[5]   DETECTION OF STRUCTURAL DEFECTS IN GAAS BY ELECTROCHEMICAL ETCHING [J].
FAKTOR, MM ;
STEVENSON, JL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :621-629
[6]  
FAKTOR MM, 1980, CURRENT TOPICS MATER, V6, P1
[7]   A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J].
FULLER, CS ;
ALLISON, HW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) :880-880
[8]   METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP [J].
HUBER, A ;
LINH, NT .
JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) :80-84
[9]   PROPERTIES OF TRANSPARENT CONDUCTING FILMS OF SNO2-SB AND IN2O3-SN DEPOSITED BY HYDROLYSIS [J].
KULASZEWICZ, S ;
LASOCKA, I ;
MICHALSKI, C .
THIN SOLID FILMS, 1978, 55 (02) :283-288
[10]   VAPOR-GROWN 1.3 MU-M INGAASP-INP AVALANCHE PHOTO-DIODES [J].
OLSEN, GH ;
KRESSEL, H .
ELECTRONICS LETTERS, 1979, 15 (05) :141-142