LOCALIZED MELTING INDUCED BY RAPID ANNEALING CORRELATED WITH THE SPACE DISTRIBUTION OF A-TYPE MICRODEFECTS IN SILICON CZOCHRALSKI-GROWN WAFERS

被引：0
|
作者：
USENKO, AY
机构：
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1993年 / 4卷 / 01期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is shown that when a standard polished single-crystalline silicon wafer is heated uniformly by light pulses from a xenon flashlamp, anisotropic melting at localized places is caused by nucleation in the bulk and the melting nuclei are A-type microdefects.
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页码：89 / 92
页数：4
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