INSTABILITY IN VACUUM DEPOSITED SILICON OXIDE

被引：19
作者：
SWYSTUN, EJ
TICKLE, AC
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 11期
关键词：
D O I：
10.1109/T-ED.1967.16103
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：760 / +
页数：1
相关论文
共 18 条
[1]   DIELECTRIC RELAXATION IN THERMALLY GROWN SIO2 FILMS [J].
BURKHARDT, PJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :268-+
[2]  
FABULA JJ, 1966, 5 ANN S PHYS FAIL EL
[3]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[4]   SHELF AND OPERATING LIFE STUDIES ON SIO PROTECTED CDSE THIN-FILM TRIODES [J].
GUTIERREZ, WA ;
WILSON, HL .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (01) :92-+
[5]  
HIROSE H, 1964, JPN J APPL PHYS, V3, P179
[6]   AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J].
HOFSTEIN, SR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :222-+
[7]  
LOGAN J, 1965, 1965 SOL STAT DEV RE
[8]   FAILURE MECHANISMS IN THIN FILM FIELD EFFECT TRANSISTORS [J].
REINHART.KK ;
RUSSELL, VA .
SOLID-STATE ELECTRONICS, 1966, 9 (10) :911-&
[9]   INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON SI SURFACE POTENTIAL IN SI-SIO2 SYSTEM [J].
REVESZ, AG ;
ZAININGER, KH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :246-+
[10]   ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].
SNOW, EH ;
GROVE, AS ;
DEAL, BE ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&
12