MODEL RELATING ELECTRICAL-PROPERTIES AND IMPURITY CONCENTRATIONS IN SEMI-INSULATING GAAS

被引:40
作者
LINDQUIST, PF [1 ]
机构
[1] HEWLETT PACKARD CO,DIV OPTOELECTR,PALO ALTO,CA 94304
关键词
D O I
10.1063/1.323769
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1262 / 1267
页数:6
相关论文
共 26 条
[1]   ETCH PITS AND DISLOCATIONS IN (100) GAAS WAFERS [J].
ANGILELLO, J ;
POTEMSKI, RM ;
WOOLHOUSE, GR .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2315-2316
[2]  
BERRERA JS, 1975, 5TH P BIENN C EL ENG, P135
[3]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P79
[4]  
Brooks H., 1955, ADV ELECTRON, V7, P85
[5]   PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].
CHIANG, SY ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991
[6]   NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].
ERGINSOY, C .
PHYSICAL REVIEW, 1950, 79 (06) :1013-1014
[7]   ANALYSIS OF POLAR OPTICAL SCATTERING OF ELECTRONS IN GAAS [J].
FORTINI, A ;
DIGUET, D ;
LUGAND, J .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3121-&
[8]  
HAISTY RW, 1964, PHYSICS SEMICONDUCTO
[9]   ON TEMPERATURE DEPENDENCE OF MIXED CONDUCTION IN CR-DOPED GAAS [J].
INOUE, T ;
OHYAMA, M .
SOLID STATE COMMUNICATIONS, 1970, 8 (16) :1309-&
[10]   HALL-EFFECT, SCHOTTKY-BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION [J].
KATODA, T ;
SUGANO, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) :1066-1073