BINDING PROBABILITY OF FREE-ELECTRONS AND FREE HOLES INTO WANNIER-MOTT EXCITON IN NONPOLAR SEMICONDUCTORS

被引：22

作者：

BARRAU, J

HECKMANN, M

COLLET, J

BROUSSEAU, M

机构：

[1] UNIV PAUL SABATIER, CNRS, LAB PHYS SOLIDES, TOULOUSE, FRANCE

[2] INSAT, TROULOUSE, FRANCE

来源：

关键词：

D O I：

10.1016/S0022-3697(73)80228-8

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1567 / 1577

页数：11

共 8 条

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